Systems and methods for read/write of memory devices and error correction
US11881240B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 7, 2021 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Jan 18, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/4402
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A read/write method and a memory are provided. The read/write method includes: issuing a read command to a memory, wherein the read command points to an address; reading to-be-read data from a storage unit corresponding to the address to which the read command points; and in response to an error occurring in the to-be-read data, marking the address to which the read command points as disabled. When executing a read/write operation on the memory, the address of the storage unit is marked to distinguish an enabled storage unit from a failed storage unit in real time. A data error or a data loss can be avoided, thereby greatly improving the reliability and the service life of the memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.