Semiconductor device and method for manufacturing same
US11881526B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 9, 2020 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Nov 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.