Transversely-excited film bulk acoustic resonator with low thermal impedance
US11881835B2 · kind B2 · utility
1Cited by
52References
21Claims
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Key dates
| Filing date | Apr 29, 2021 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Dec 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm. The piezoelectric plate and the BOX layer are removed from a least a portion of the surface area of the device to provide lower thermal resistance between the IDT and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.