Thin-film transistor comprising organic semiconductor materials
US11882710B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2019 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Nov 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/621
Abstract
This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.