Multilayer body and electronic device
US11884546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2019 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Dec 12, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2204/22
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A multilayer body includes a base portion and a graphene film. In an ion mass distribution versus depth of the multilayer body determined by time-of-flight secondary ion mass spectrometry, detection intensities of C6 ions have a maximum value at a depth of greater than 0 nm and 2.5 nm or less from an exposed surface. Detection intensities of C3 ions have a maximum value at a depth of greater than 0 nm and 3.0 nm or less from the exposed surface. Detection intensities of SiC4 ions have a maximum value at a depth of 0.5 nm or greater and 5.0 nm or less from the exposed surface. Detection intensities of SiC ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. Detection intensities of Si2 ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. A value obtained by dividing the maximum value of the detection intensities of SiC4 ions by an average of detection intensities of SiC4 ions associated with a region of the multilayer body is 1 or greater and 3.5 or less, the region having distances from the exposed surface in a thickness direction of the multilayer body of equal to or greater than …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.