Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
US11885007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2022 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Jun 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02031
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.