Process and device for producing a chalcogen-containing compound semiconductor

US11885010B2 · kind B2 · utility

Assignee

• CNBM RESEARCH INSTITUTE FOR ADVANCED GLASS MATERIALS GROUP CO., LTD. · CN

Inventors

• Joerg Palm · Munich, DE
• Thomas Niesen · Karlsruhe, DE
• Erik Trabitzsch · Leipzig, DE

Key dates

• Filing date: May 6, 2020
• Grant date: Jan 30, 2024
• Expiry date: Aug 3, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02568
• WIPO field: Chemical engineering
• WIPO sector: Chemistry

Abstract

A process for producing a chalcogen-containing compound semiconductor includes providing at least one substrate coated with a precursor for the chalcogen-containing compound semiconductor in a process chamber; heat treating the at least one coated substrate in the process chamber, wherein during a heat treatment, a gas atmosphere comprising at least one gaseous chalcogen compound is provided in the process chamber; removing the gas atmosphere present after the heat treatment of the at least one coated substrate as a waste gas from the process chamber; cooling the waste gas in a gas processor, wherein a plurality of gaseous chalcogen compounds-present in the waste gas after the heat treatment of the at least one coated substrate are separated in time and space from one another from the waste gas by respective conversion into a liquid or solid form. Further provided is a device designed to carry out the process.