Multiple patterning with organometallic photopatternable layers with intermediate freeze steps
US11886116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2021 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Jul 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.