Temperature assisted NAND flash management
US11886313B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2020 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Apr 4, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F11/3034
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems, apparatus and methods are provided for temperature assisted non-volatile storage device management in a non-volatile storage system. In one embodiment, a non-volatile storage system may comprise a temperature sensor, a non-volatile storage device and a processor. The processor may be configured to obtain a read-out from the temperature sensor, generate a predicted real-time on-die temperature for the non-volatile storage device based on the read-out, generate an estimated threshold voltage for reading data stored in the non-volatile storage device based on the predicted real-time on-die temperature and conduct a local sweep of a reference voltage using the estimated threshold voltage as a starting point to obtain a final read reference voltage with a minimum read bit error rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.