Semiconductor device and method for manufacturing the same
US11887840B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2022 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Jul 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13184
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate. A conductive layer is disposed on the substrate and extends in a first direction. An insulating layer is disposed on the conductive layer and exposes at least a portion of the conductive layer through a via hole. The via hole includes a first face extending in a first slope relative to a top face of the conductive layer. A second face extends in a second slope relative to the top face of the conductive layer that is less than the first slope. A redistribution conductive layer includes a first pad area disposed in the via hole. A line area at least partially extends along the first face and the second face. The first face directly contacts the conductive layer. The second face is positioned at a higher level than the first face in a second direction perpendicular to a top face of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.