Patent · US Active

Semiconductor device, semiconductor arrangement and method for producing the same

US11887961B2 · kind B2 · utility

0Cited by

0References

15Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Paul Frank · Villach, AT
Thomas Heinelt · Dresden, DE
Oliver Schilling · Warstein, DE
Sven Schmidbauer · Dresden, DE
Frank Wagner · Reiskirchen, DE

Key dates

Filing date	Mar 7, 2022
Grant date	Jan 30, 2024
Priority date	—
Expiry date	Jul 28, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/37001
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor wafer or a single semiconductor chip or die, and a layer stack. The layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.