Transient voltage suppression device and manufacturing method therefor
US11887979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2019 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Sep 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/931
Abstract
A transient voltage suppression device and a manufacturing method therefor, the transient voltage suppression device including: a substrate, a first conductivity type well region and a second conductivity type well region disposed in the substrate. The first conductivity type well region includes a first well, a second well, and a third well. The second conductivity type well region includes a fourth well that isolates the first well from the second well, and a fifth well that isolates the second well from the third well. The device further includes a Zener diode well region provided in the first well, a first doped region provided in the Zener diode well region, a second doped region provided in the Zener diode well region, a third doped region provided in the second well, a fourth doped region provided in the third well, and a fifth doped region provided in the third well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.