Solid-state imaging apparatus and electronic apparatus
US11888008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2021 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Sep 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.