Solid-state image capturing element, solid-state image capturing device, and solid-state image capturing element reading method
US11888012B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 25, 2019 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Jan 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided is a solid-state image capturing element including a semiconductor substrate and first and second photoelectric conversion parts configured to convert light into electric charge. The first and the second photoelectric conversion parts each have a laminated structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film. The lower electrode of each of the first and the second photoelectric conversion parts is electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in common to the first and the second photoelectric conversion parts in the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.