SOI lateral homogenization field high voltage power semiconductor device, manufacturing method and application thereof

US11888022B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Wentong ZHANG · Chengdu, CN
• Ning Tang · Libertyville, US
• Ke Zhang · Chengdu, CN
• Nailong HE · Wuxi, CN
• Ming Qiao · Chengdu, CN
• Zhaoji Li · Shandong, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: May 16, 2022
• Grant date: Jan 30, 2024
• Expiry date: Jun 17, 2042

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02B70/10

Abstract

An SOI lateral homogenization field high voltage power semiconductor device, and a manufacturing method and application thereof are provided. The device includes a type I conductive semiconductor substrate, a type II conductive drift region, a type I field clamped layer, type I and type II conductive well regions, the first dielectric oxide layer forming a field oxide layer, the second dielectric oxide layer forming a gate oxide layer, a type II conductive buried dielectric layer, a type II conductive source heavily doped region, a type II conductive drain heavily doped region. The first dielectric oxide layer and the floating field plate polysilicon electrodes form a vertical floating field plate distributed throughout the type II conductive drift region to form a vertical floating equipotential field plate array. When the device is in on-state, high doping concentration can be realized by the full-region depletion effect form the vertical field plate arrays.