Semiconductor device and manufacturing method thereof employing an etching transition layer

US11888052B2 · kind B2 · utility

Assignee

• SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Qian Sun · Nanhu, CN
• Shuai Su · Beijing, CN
• Yu Ting Zhou · Suzhou, CN
• Yaozong ZHONG · Suzhou, CN
• Hongwei Gao · Beijing, CN
• Jianxun Liu · Beijing, CN
• Xiaoning ZHAN · Suzhou, CN
• Meixin Feng · Suzhou, CN
• Hui Yang · Singapore, SG

Key dates

• Filing date: Dec 31, 2019
• Grant date: Jan 30, 2024
• Expiry date: Feb 19, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/685

Abstract

The present application discloses a semiconductor device and a manufacturing method thereof. The manufacturing method comprises manufacturing a semiconductor material layer comprising two laminated semiconductor layers between which an etching transition layer is provided; and etching a part of one of semiconductor layers located in a selected region until etching is stopped after reaching or entering the etching transition layer, subjecting the part of the etching transition layer located in the selected region to thermal decomposition through thermal treatment to be completely removed, and realizing termination of thermal decomposition on another semiconductor layer, so as to precisely form a trench structure in the semiconductor material layer. The present application can achieve precise control of the depth of the trench etched on the semiconductor material to thoroughly avoid surface damage caused by etching and ensure that the electrical characteristic of the device is not affected by fluctuation of the etching process.