Power semiconductor device having elevated source regions and recessed body regions

US11888061B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Erich Griebl · Dorfen, DE
• Markus Beninger-Bina · Großhelfendorf, DE
• Matteo Dainese · Munich, DE
• Ingo Dirnstorfer · Eindhoven, NL

Key dates

• Filing date: Jan 17, 2022
• Grant date: Jan 30, 2024
• Expiry date: Jan 17, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor device includes: a semiconductor body; a control electrode at least partially on or inside the semiconductor body; elevated source regions in the semiconductor body adjacent to the control electrode; recessed body regions adjacent to the elevated source regions; and a dielectric layer arranged on a portion of a surface of the semiconductor body and defining a contact hole. The contact hole is at least partially filled with a conductive material establishing an electrical contact with at least a portion of the elevated source regions and at least a portion of the recessed body regions. At least one first contact surface between at least one elevated source region and the dielectric layer extends in a first horizontal plane. At least one second contact surface between at least one recessed body region and the dielectric layer extends in a second horizontal plane located vertically below the first horizontal plane.