Laser diode driver break-down protection scheme
US11888288B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2020 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Oct 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06808
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system is provided for maintaining a safe operating area while also providing a suitable forward bias voltage to drive a laser diode. The system can monitor a voltage that is applied to a laser diode driver using a threshold that is based on the fabrication process of the laser diode driver. For example, a system can utilize a first threshold for a laser diode driver that is fabricated utilizing a 10 nm process and utilize a second threshold for another laser diode driver that is fabricated utilizing a 20 nm process. The threshold can also be based on a color of the laser or a desired operation mode. The system can monitor a voltage applied to a laser diode using different thresholds while controlling a bleed current to ensure that the laser diode is forward biased while mitigating the risk of silicon breakdown of the laser diode driver.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.