OLED with electron transport layer within insulating layer

US11889739B2 · kind B2 · utility

Assignee

• Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. · CN

Inventors

• Feng Wei · Lo Wu, CN
• Aiguo TU · Lo Wu, CN

Key dates

• Filing date: Nov 8, 2019
• Grant date: Jan 30, 2024
• Expiry date: Nov 8, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K2102/351

Abstract

The present invention provides an organic light-emitting diode (OLED) device and a manufacturing of the OLED device. The OLED device includes a light-emitting layer, an insulating layer, an electron transport layer, and an electron injection layer. The insulating layer is arranged on one side of the light-emitting layer, and a through hole is in the insulating layer. The through hole is arranged corresponding to a middle portion of the light-emitting layer. The electron transport layer is in a lower portion of the through hole and attached to a surface of the light-emitting layer. The electron injection layer is in an upper portion of the through hole and attached to one side of the electron transport layer away from the light-emitting layer.