Variable resistance non-volatile memory element and variable resistance non-volatile memory device using the element
US11889776B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2021 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | May 20, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.