Memory controller, memory system with improved threshold voltage distribution characteristics, and operation method
US11894079B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2021 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Jul 23, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7206
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory controller includes an over-program controller that preprograms and then erases the memory cells such that each of the memory cells has a first threshold voltage level, wherein fast cells are detected among the memory cells according to a threshold voltage less than or equal to a second threshold voltage less than the first threshold voltage, and a processor that generates fast cell information identifying the fast cells among the memory cells and stores the fast cell information in a buffer. The over-program controller controls the over-programming of the fast cells and normal programming of normal cells among the memory cells based on the fast cell information stored in the buffer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.