Anti-fuse memory and control method thereof
US11894082B2 · kind B2 · utility
0Cited by
4References
16Claims
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Inventor
Key dates
| Filing date | Apr 2, 2022 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Jun 30, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure relate to the field of semiconductor technology, and provide an anti-fuse memory and a control method thereof. The anti-fuse memory is configured to generate a programming pulse signal based on a row strobe signal, a word line of the anti-fuse memory array is configured to receive the row strobe signal, and the anti-fuse memory array is programmed in response to the programming pulse signal. The embodiments of the present disclosure are at least advantageous to improving accuracy of reading data from the anti-fuse memory array and improving yield of the anti-fuse memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.