Display apparatus having an oxide semiconductor pattern
US11894384B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2022 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Jul 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
Abstract
A display apparatus can include a driving circuit on a device substrate, the driving circuit including a first thin film transistor and a second thin film transistor, a first insulating layer on the first thin film transistor and the second thin film transistor of the driving circuit, a second insulating layer on the first insulating layer, and a light-emitting device on the second insulating layer, the light-emitting device being electrically connected to the second thin film transistor of the driving circuit. Each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor pattern and a gate electrode overlapping a portion of the oxide semiconductor pattern. The gate electrode has a stacked structure of a first hydrogen barrier layer and a low-resistance electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.