Photodetector, display substrate, and method of manufacturing photodetector
US11894398B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Mar 17, 2021 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Aug 17, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photodetector, includes a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode connected to one of source/drain electrodes of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor; wherein the photodetector further is a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor. A method of manufacturing a photodetector is further provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.