Method for fabricating an image sensing device having a primary grid and a second grid surrounding the primary grid
US11894404B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 26, 2022 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | May 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
The present disclosure provides an optical structure and a method for fabricating an optical structure, the method includes forming a light detection region in a substrate, forming an isolation structure at surrounding the light detection region, and forming a primary grid over the isolation structure, including forming a metal layer over the isolation structure, forming a first dielectric layer over the metal layer, and partially removing the metal layer and the first dielectric layer with a first mask by patterning, and forming a secondary grid at least partially surrounded by the primary grid laterally.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.