Silicon carbide semiconductor device and power converter
US11894428B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2019 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | May 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a silicon carbide semiconductor device that includes a Schottky barrier diode in a field-effect transistor and includes a first trench provided through first and second semiconductor regions in a thickness direction and reaches inside a semiconductor layer, a second trench provided through the second semiconductor region in the thickness direction and reaches inside the semiconductor layer, a gate electrode embedded in the first trench via a gate insulating film, a Schottky barrier diode electrode embedded in the second trench, a first low-resistance layer having contact with a trench side wall of the first trench, and a second low-resistance layer having contact with a trench side wall of the second trench. The second low-resistance layer has an impurity concentration that is higher than the impurity concentration in the semiconductor layer and lower than the impurity concentration in the first low-resistance layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.