Silicon carbide MOSFET device and manufacturing method thereof
US11894440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2021 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Mar 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed a silicon carbide MOSFET device and manufacturing method thereof. The method includes: forming a patterned first barrier layer on an upper surface of the substrate; forming a base region of a second doping type extending from the upper surface to an inside of the substrate through oblique implantation in a first ion implantation process by using a first barrier layer as a mask; forming a source region of the first doping type in the substrate; forming a contact region of the second doping type in the substrate; and forming a gate structure, an implantation angle of the first ion implantation process is adjusted so that the base region extends below a part of the first barrier layer. The method of the present disclosure not only reduces one photoetching process and saves cost, but also realizes a short channel and reduces an on-resistance of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.