Lateral double-diffused metal oxide semiconductor field effect transistor
US11894458B2 · kind B2 · utility
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Key dates
| Filing date | Sep 25, 2020 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Nov 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS), including: a trench gate including a lower part inside a trench and an upper part outside the trench, a length of the lower part in a width direction of a conducting channel being less than that of the upper part, and the lower part extending into a body region and having a depth less than that of the body region; an insulation structure arranged between a drain region and the trench gate and extending downwards into a drift region, a depth of the insulation structure being less than that of the drift region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.