Doped metal oxide semiconductor and thin-film transistor made therefrom and its application

US11894467B2 · kind B2 · utility

Assignee

• South China University of Technology · CN

Inventors

• Miao Xu · Nanhu, CN
• Hua Xu · Dunlap, US
• Weijing Wu · 流花街道, CN
• Weifeng Chen · Amherst, US
• Lei Wang · Singapore, SG
• Junbiao Peng · Beijing, CN

Key dates

• Filing date: Nov 8, 2019
• Grant date: Feb 6, 2024
• Expiry date: Nov 8, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.