Leave-in etch mask for foil-based metallization of solar cells
US11894472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2020 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Mar 13, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Approaches for fabricating foil-based metallization of solar cells based on a leave-in etch mask, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes metal foil portions in alignment with corresponding ones of the alternating N-type and P-type semiconductor regions. A patterned wet etchant-resistant polymer layer is disposed on the conductive contact structure. Portions of the patterned wet etchant-resistant polymer layer are disposed on and in alignment with the metal foil portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.