Low leakage current germanium-on-silicon photo-devices

US11894480B2 · kind B2 · utility

Assignee

• TriEye Ltd. · IL

Inventors

• Eran Katzir · Jerusalem, IL
• Vincent Immer · Petah Tikva, IL
• Omer Kapach · Jerusalem, IL
• Avraham Bakal · Nes Ziona, IL
• Uriel Levy · Kiryat Ono, IL

Key dates

• Filing date: May 4, 2019
• Grant date: Feb 6, 2024
• Expiry date: Sep 22, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/221

Abstract

Germanium (Ge)-Silicon (Si) structures, optoelectronic devices and method for forming same. A structure comprises a Si substrate, a Ge seed layer and a Ge epitaxial layer separated by respective interfaces that share a common plane normal, wherein the Si substrate and the Ge seed layer have a same first doping type with a first doping level, and a locally doped region formed in the Si layer adjacent to the Ge seed layer and having a second doping type with a second doping level, wherein the locally doped region is designed to reduce leakage currents between the Si substrate and the Ge epitaxial layer when an electrical bias is applied to the structure.