Image sensor
US11895417B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Feb 8, 2022 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Feb 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present description describes an image sensor including an array of pixels arranged inside and on top of a region of a semiconductor substrate electrically insulated from the rest of the substrate by insulating trenches crossing the substrate, each pixel including a photoconversion area and at least two assemblies, each including a memory area and a transfer gate coupling the memory area to the photoconversion area, and a circuit configured to apply, for each pixel and at least during each integration phase, a bias voltage different from ground to a portion of the substrate having the pixel arranged inside and on top of it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.