Treatment of a thin film by hydrogen plasma and polarisation in order to improve the crystalline quality thereof
US11898239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2020 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Sep 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for treating a thin film made from a conductive or semiconductive material may improve the crystalline quality thereof. Such methods may include: supplying a substrate including, on one of the faces thereof, a thin film of the material; and biased plasma treating the assembly formed by the substrate and the thin film at a given temperature and for a given time, so as to obtain a crystalline reorganization over a depth of the thin film, the biased plasma treatment including an electrical biasing of the thin film and an exposure of the film thus biased to a hydrogen plasma, the biased plasma treatment being implemented at a temperature that is below the melting points of the thin film and of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.