Photothermal modification of high index dielectric structures
US11899285B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2017 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Mar 11, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2207/101
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is presented a method for geometrically modifying high-index dielectric structures on a support structure which includes steps of providing a support structure and a first plurality of high-index dielectric structures supported by the support structure. The method includes changing a geometry of the high-index dielectric structures within a second plurality of high-index dielectric structures, being a sub-set of the first plurality of high-index dielectric structures. The geometry is changed by photothermally melting some of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating them with incident electromagnetic radiation, and thereby exciting resonances associated with each of the high-index dielectric structures within the second plurality of high-index dielectric structures. The support structure comprises a first plurality of topographical features and the first plurality of high-index dielectric structures are given by high-index dielectric structures on or in said topographical features and holes in a high-index dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.