Patent · US Active

Method of reducing semiconductor substrate surface unevenness

US11901186B2 · kind B2 · utility

0Cited by

10References

14Claims

0Family size

Assignees

Massachusetts Institute of Technology · US
Nanyang Technological University · SG
NATIONAL UNIVERSITY OF SINGAPORE · SG

Inventors

Li Zhang · Inagi, JP
Kwang Hong Lee · Singapore, SG
Keith Cheng Yeow Ng · Singapore, SG
Kenneth E. Lee · Dansville, US
Eugene A. Fitzgerald · Windham, US
Soo Jin Chua · Singapore, SG
Chuan Seng Tan · Singapore, SG

Key dates

Filing date	Feb 19, 2019
Grant date	Feb 13, 2024
Priority date	—
Expiry date	Jan 30, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/83896
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed is a method of reducing surface unevenness of a semiconductor wafer (100). In a preferred embodiment, the method comprises: removing a portion of a deposited layer and a protective layer thereon using a first slurry to provide an intermediate surface (1123). In the described embodiment, the deposited layer includes an epitaxial layer (112) and the protective layer includes a first dielectric layer (113). The first slurry includes particles with a hardness level the same as or exceeding that of the epitaxial layer (112). A slurry for use in wafer fabrication for reducing surface unevenness of a semiconductor wafer is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.