Fabrication method of device with cavity
US11901193B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 10, 2023 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | May 10, 2043 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a device having a cavity, includes: obtaining a device wafer including a first substrate and a device structure formed on the first substrate, depositing a first dielectric layer on the device wafer, etching the first dielectric layer to expose at least a part of the device structure and a part of the first substrate, depositing, after the etching, a second dielectric layer on the device wafer and the first dielectric layer, performing a surface treatment on a surface of the second dielectric layer, obtaining a second substrate, and bonding the second substrate with the second dielectric layer on the device wafer, thereby forming the cavity between the second substrate and the device wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.