Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip
US11901240B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Apr 6, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Sep 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a vertical field-effect transistor (VFET) device which includes: a substrate; a plurality of single-fin VFETs including respective 1st fin structures on the substrate; and a plurality of multi-fin VFETs each of which includes a plurality of 2nd fin structures on the substrate, wherein a fin pitch of the 2nd fin structures is smaller than a fin pitch of the 1st fin structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.