Methods related to radio-frequency switching devices having improved voltage handling capability
US11901243B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Apr 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods related to radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a method for fabricating an RF switching device can include: providing a semiconductor substrate; forming a plurality of field-effect transistors (FETs) on the semiconductor substrate such that the FETs have a non-uniform distribution of a parameter; and connecting the FETs to form a stack, such that the non-uniform distribution results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.