Capacitor and method for forming the same
US11901283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Dec 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) structure includes a semiconductor substrate, a bottom electrode routing, a capacitor structure, a top electrode routing. The bottom electrode routing is over the semiconductor substrate. The capacitor structure is over the bottom electrode routing. The capacitor structure includes a bottom metal layer, a middle metal layer above the bottom metal layer, and a top metal layer above the middle metal layer. When viewed in a plan view, the top metal layer has opposite straight edges extending along a first direction and opposite square wave-shaped edges connecting the opposite straight edges, the square wave-shaped edges each comprise alternating first and second segments extending along a second direction perpendicular to the first direction, and third segments each connecting adjacent two of the first and second segments, wherein the third segments extend along the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.