Semiconductor device with improved junction termination extension region

US11901407B2 · kind B2 · utility

Assignee

• Nexperia B.V. · NL

Inventors

• Romain Esteve · Munich, DE
• Tim Böttcher · Nijmegen, NL

Key dates

• Filing date: Sep 24, 2021
• Grant date: Feb 13, 2024
• Expiry date: Feb 26, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A semiconductor device having an improved junction termination extension region is provided. The disclosure particularly relates to diodes having such an improved junction termination extension. The semiconductor device includes an active area extending in a first direction, and a junction termination extension, ‘JTE’, region of a first charge type surrounding the active area. The JTE region includes a plurality of field relief sub-regions that each surround the active area and that are mutually spaced apart in a direction perpendicular to a circumference of the active area. The plurality of field relief sub-regions includes a first group of field relief sub-regions, and for each field relief sub-region of the first group, a plurality of field relief elements of a second charge type is provided therein, which field relief elements are mutually spaced apart in a circumferential direction with respect to the active area.