Light emitting diode devices
US11901491B2 · kind B2 · utility
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46References
6Claims
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Assignee
Inventor
Key dates
| Filing date | Mar 2, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Jul 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/83
Abstract
Described are light emitting diode (LED) devices comprising a mesa with semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer. The mesa has a top surface and at least one side wall, the at least one side wall defining a trench having a bottom surface. A passivation layer is on the at least one side wall and on the top surface of the mesa, the passivation layer comprises one or more a low-refractive index material and distributed Bragg reflector (DBR). A p-type contact is on the top surface of the mesa, and an n-type contact on the bottom surface of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.