Wavelength drift suppression for burst-mode tunable EML laser
US11901696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2019 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Jan 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B10/27
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method (700) of biasing a tunable laser (310) during burst-on and burst-off states includes receiving a burst mode signal (514) indicative of the burst-on state or the burst-off state and when the burst mode signal is indicative of the burst-on state: delivering a first bias current (IGAIN) to an anode of a gain-section diode (590a) disposed on a shared substrate of the tunable laser; and delivering a second bias current (IPH) to an anode of phase-section diode (590b) disposed on the shared substrate. The second bias current is less than the first bias current. When the burst mode signal transitions to be indicative of the burst-off state, the method also includes delivering the first bias current to the anode of the gain-section diode; and delivering the second bias current to the anode of the phase-section diode wherein the first bias current is less than the second bias current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.