Through via structure, semiconductor device including the through via structure, and massive data storage system including the semiconductor device
US11903199B2 · kind B2 · utility
0Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2021 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Jan 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/32145
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A through via structure includes a through via and a capping pattern. The through via includes a metal pattern extending in a vertical direction, and a barrier pattern on a sidewall and a lower surface of the metal pattern. The capping pattern contacts an upper surface of the through via. A lowermost surface of an edge portion of the capping pattern is not higher than a lowermost surface of a central portion of the capping pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.