Photodetectors based on two-dimensional quantum dots
US11903225B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2022 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | Mar 24, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photodetector includes a first electrode; an interlayer disposed on the first electrode; a photoabsorbing layer disposed on the interlayer, the photoabsorbing layer having one or more charge transport materials, and a plurality of two-dimensional quantum dots (2D QDs) dispersed in the one or more charge transport material; and a second electrode disposed on the photoabsorbing layer. A heterostructure photodetector includes a first electrode; a first photoabsorbing layer disposed on the first electrode, the first photoabsorbing layer having a first photoabsorbing material; a second photoabsorbing layer disposed on the first photoabsorbing layer, the second photoabsorbing layer having a second photoabsorbing material; and a second electrode disposed on the second photoabsorbing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.