Patent · US Active

Photodetectors based on two-dimensional quantum dots

US11903225B2 · kind B2 · utility

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1References
11Claims
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Assignee

Inventors

Key dates

Filing dateMar 24, 2022
Grant dateFeb 13, 2024
Priority date
Expiry dateMar 24, 2042

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/549
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A photodetector includes a first electrode; an interlayer disposed on the first electrode; a photoabsorbing layer disposed on the interlayer, the photoabsorbing layer having one or more charge transport materials, and a plurality of two-dimensional quantum dots (2D QDs) dispersed in the one or more charge transport material; and a second electrode disposed on the photoabsorbing layer. A heterostructure photodetector includes a first electrode; a first photoabsorbing layer disposed on the first electrode, the first photoabsorbing layer having a first photoabsorbing material; a second photoabsorbing layer disposed on the first photoabsorbing layer, the second photoabsorbing layer having a second photoabsorbing material; and a second electrode disposed on the second photoabsorbing layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.