Semiconductor device and method for fabricating the same
US11903254B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2022 |
| Grant date | Feb 13, 2024 |
| Priority date | — |
| Expiry date | May 6, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.