Terminal material for connector
US11905614B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2020 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Sep 29, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22C9/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 μm to 1.0 μm inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 μm to 2.5 μm inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 μm to 3.0 μm inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 μm and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 μm or more, and a grain size ratio Ds/Dc is five or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.