Multi-level authentication using different materials
US11907782B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2021 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Feb 3, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG07D7/2033
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
Among other concepts, this disclosure describes a thermal/optical/electronic authentication system (covert or non-covert) for device/system implementations. The authentication system may be based on different design parameters such as i) materials composition, ii) thickness of material, iii) geometry of material, iv) external effects including use of an external DC bias and curing, etc. The authentication testbeds can be configured to include one or more inks. Using such methods as discussed herein, the authentication can be broadened to include near-IR (700-900 nm), short wave IR (1-2.6 mm), and UVA (300-400 nm) or any spectrum. Printed resistors are very difficult to duplicate without Ag-BST13 ink. If necessary, a printed resistor network on a respective substrate can be hidden using a layer of non-sintered Ag-BST13 (non-conductive).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.