Method and system for controlling profile of critical dimension
US11908754B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 4, 2021 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Mar 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching apparatus is provided to be able to rotate or tilt a substrate holder on which a to-be-processed substrate is placed. According to a profile of a pre-process critical dimension of the substrate, the etching apparatus may rotate or tilt the substrate holder during an etching process in order to achieve a desired profile of a post-process critical dimension of the substrate that is related to the pre-process critical dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.