Semiconductor structure and fabrication method thereof

US11908865B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Da-Wei Huang · Fuzhou, CN
• Yao Qi Dong · Shanghai, CN
• Xiaowan Dai · Shanghai, CN
• Zhen Tian · Shanghai, CN

Key dates

• Filing date: Jan 14, 2022
• Grant date: Feb 20, 2024
• Expiry date: May 23, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0193

Abstract

A semiconductor structure and a fabrication method of the semiconductor structure are provided. The semiconductor structure includes a substrate. The substrate includes a first region, a second region, and an isolation region between the first region and the second region. The semiconductor structure also includes a first fin, a second fin and a third fin disposed over the first region, the second region, and the isolation region, respectively. Further, the semiconductor structure includes a gate structure. The gate structure includes a first work function layer over the first region and a first portion of the isolation region, and a second work function layer over the second region and a second portion of the isolation region. An interface where the first work function layer is in contact with the second work function layer is located over a top surface of the third fin.