Single-gate field effect transistor and method for modulating the drive current thereof
US11908935B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2020 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Jul 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/647
Abstract
The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.